Size Dependence of the 2p-Level Shift of Nanosolid Silicon

Sun, Chang Qing, Pan, L. K., Fu, Yong Qing, Tay, Beng Kang and Li, Sean (2003) Size Dependence of the 2p-Level Shift of Nanosolid Silicon. The Journal of Physical Chemistry B, 107 (22). pp. 5113-5115. ISSN 1520-6106

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Modeling exercises on the size-induced blue-shift in the photoluminescence (PL) of nanosolid Si (J. Phys. Chem. B 2002, 106, 11725) have been extended herewith to the size dependence of the Si-2p energy-level-shift measured using X-ray photoelectron spectroscopy (XPS). Results show consistency in both the origin and trend of the core-level shift with that of band-gap expansion upon Si nanosolid formation. Most strikingly, decoding the size dependent XPS peak shift leads to quantitative information about the 2p-level atomic trapping energy of an isolated Si atom (−96.74 eV) and the crystal binding intensity (−2.46 eV) upon bulk solid formation, which is beyond the scope of direct measurement using currently available techniques.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 26 Mar 2015 12:55
Last Modified: 12 Oct 2019 19:05

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