Effects of silicon nitride interlayer on phase transformation and adhesion of TiNi films

Fu, Yong Qing, Du, Hejun, Zhang, Sam and Ong, Soon-Eng (2005) Effects of silicon nitride interlayer on phase transformation and adhesion of TiNi films. Thin Solid Films, 476 (2). pp. 352-357. ISSN 0040 6090

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Official URL: http://dx.doi.org/10.1016/j.tsf.2004.09.058


TiNi films with different Ti/Ni ratios were deposited on Si substrates with and without silicon nitride interlayer. Near-equiatomic TiNi films were found to have the lowest residual stress and the highest recovery stress regardless of the existence of silicon nitride interlayer. The addition of silicon nitride interlayer between film and Si substrate did not cause much change in phase transformation behavior as well as adhesion properties. X-ray photoelectron spectroscopy (XPS) analysis revealed that there is significant interdiffusion of elements and formation of Ti–N and Si–Si bonds at TiNi film/silicon nitride interface. Scratch test results showed that adhesion between the TiNi film and substrate was slightly improved with the increase of Ti content in TiNi films.

Item Type: Article
Uncontrolled Keywords: TiNi; Adhesion; Sputtering; Shape memory; XPS; Silicon nitride
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 26 Mar 2015 16:19
Last Modified: 12 Oct 2019 19:06
URI: http://nrl.northumbria.ac.uk/id/eprint/21845

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