Phase transition and microstructure change in Ta–Zr alloy films by co-sputtering

Tang, Z. Z., Hsieh, Jang-Hsing, Zhang, Shanyong, Li, C. and Fu, Yong Qing (2005) Phase transition and microstructure change in Ta–Zr alloy films by co-sputtering. Surface and Coatings Technology, 198 (1-3). pp. 110-113. ISSN 0257 8972

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Ta–Zr Thin films with wide range of compositions were deposited on Si (100) substrate by co-sputtering. RF bias power from 0 to 80 W was applied during deposition. Films were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and four-point probe. Result showed the incorporation of Zr caused the formation of low-resistivity BCC Ta, which made the resistivity of Ta–Zr films decrease. With substrate bias increasing, the compositional range for forming amorphous structure shrank. The effects of both thermodynamics and kinetics on Ta–Zr amorphization tendency were discussed.

Item Type: Article
Uncontrolled Keywords: Co-sputtering; Ta–Zr; Amorphization
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 26 Mar 2015 16:37
Last Modified: 12 Oct 2019 19:06

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