Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric

Liu, Yang, Chen, Tu Pei, Ng, C. Y., Tse, Man Siu, Zhao, P., Fu, Yong Qing, Zhang, Sam and Fung, Steve (2005) Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric. Nanotechnology, 16 (8). pp. 1119-1122. ISSN 0957-4484

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Abstract

In this paper, we report a study on time-domain capacitance characterization of metal–oxide–semiconductor (MOS) structures with Si nanocrystals (nc-Si) distributing throughout the gate oxide. A drastic reduction of MOS capacitance can be observed by charge trapping in nc-Si, while release of the charges leads to the recovery of the capacitance. Such capacitance modulation is explained by an equivalent circuit in terms of the change of nc-Si capacitance as a result of charging/discharging. As the capacitance modulation represents a change in the electrical states of MOS structure, it could be used for memory applications.

Item Type:	Article
Subjects:	F200 Materials Science
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	26 Mar 2015 16:39
Last Modified:	12 Oct 2019 19:06
URI:	http://nrl.northumbria.ac.uk/id/eprint/21853

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