Differential 3ω method for measuring thermal conductivity of AlN and Si3N4 thin films

Bogner, Manuel, Hofer, Alexander, Benstetter, Günther, Gruber, Hermann and Fu, Yong Qing (2015) Differential 3ω method for measuring thermal conductivity of AlN and Si3N4 thin films. Thin Solid Films, 591 (Part B). pp. 267-270. ISSN 0040-6090

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Abstract

The thermal conductivity λ of plasma enhanced chemical vapor deposited Si3N4 and sputtered AlN thin films deposited on silicon substrates were obtained utilizing the differential 3ω method. A thin electrically conductive strip was deposited onto the investigated thin film of interest, and used as both a heater and a temperature sensor. To study the thickness dependent thermal conductivity of AlN and Si3N4 films their thickness was varied from 300 to 1000 nm. Measurements were performed at room temperature at a chamber pressure of 3.1 Pa. The measured thermal conductivity values of AlN and Si3N4 thin films were between 5.4 and 17.6 Wm− 1 K− 1 and 0.8 up to 1.7 Wm− 1 K− 1, respectively. The data were significantly smaller than that of the bulk materials found in literature (i.e., λAlN = 250–285 Wm− 1 K− 1, λSi3N4 = 30 Wm− 1 K− 1), due to the scaling effects, and also strongly dependent on film thickness, but were comparable with literature for the corresponding thin films.

Item Type:	Article
Uncontrolled Keywords:	Aluminum nitride; Silicon nitride; Thermal conductivity; Three omega method
Subjects:	F200 Materials Science
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	20 Apr 2015 08:19
Last Modified:	12 Oct 2019 19:21
URI:	http://nrl.northumbria.ac.uk/id/eprint/22090

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