Comparative study of trap densities of states in CdTe∕CdS solar cells

Proskuryakov, Yuri, Major, Jonathan, Durose, Ken, Barrioz, Vincent, Irvine, Stuart, Jones, Eurig and Lamb, Daniel (2007) Comparative study of trap densities of states in CdTe∕CdS solar cells. Applied Physics Letters, 91 (15). p. 153505. ISSN 0003 6951

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Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 24 Nov 2015 09:56
Last Modified: 12 Oct 2019 19:06

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