Barrioz, Vincent, Proskuryakov, Yuri, Jones, Eurig, Major, Jonathan, Irvine, Stuart, Durose, Ken and Lamb, Daniel (2007) Highly Arsenic Doped CdTe Layers for the Back Contacts of CdTe Solar Cells. MRS Proceedings, 1012. ISSN 1946-4274
Full text not available from this repository. (Request a copy)Abstract
In an effort to overcome the lack of a suitable metal as an ohmic back contact for CdTe solar cells, a study was carried out on the potential for using a highly arsenic (As) doped CdTe layer with metallization. The deposition of full CdTe/CdS devices, including the highly doped CdTe:As and the CdCl2 treatment, were carried out by metal organic chemical vapour deposition (MOCVD), in an all-in-one process with no etching being necessary. They were characterized and compared to control devices prepared using conventional bromine-methanol back contact etching. SIMS and C-V profiling results indicated that arsenic concentrations of up to 1.5 × 1019 at·cm-3 were incorporated in the CdTe. Current-voltage (J-V) characteristics showed strong improvements, particularly in the open-circuit voltage (Voc) and series resistance (Rs): With a 250 nm thick doped layer, the series resistance was reduced from 9.8 Ω·cm2 to 1.6 Ω·cm2 for a contact area of 0.25 cm2; the J-V curves displayed no rollover, while the Voc increased by up to 70 mV (~ 12 % rise). Preliminary XRD data show that there may be an As2Te3 layer at the CdTe surface which could be contributing to the low barrier height of this contact.
Item Type: | Article |
---|---|
Uncontrolled Keywords: | photovoltaic; II-VI; dopant |
Subjects: | F200 Materials Science |
Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
Depositing User: | Becky Skoyles |
Date Deposited: | 24 Nov 2015 10:24 |
Last Modified: | 12 Oct 2019 19:06 |
URI: | http://nrl.northumbria.ac.uk/id/eprint/24714 |
Downloads
Downloads per month over past year