A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells

Barrioz, Vincent, Rowlands-Jones, Rachael, Jones, Eurig, Irvine, Stuart, Zoppi, Guillaume and Durose, Ken (2005) A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells. MRS Proceedings, 865. ISSN 1946-4274

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Official URL: http://dx.doi.org/10.1557/PROC-865-F3.4


A comparison has been made of MOCVD grown CdTe/CdS solar cells processed either by ex situ annealing with CdCl2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using Jsc measurements on arrays of gold contacts to the CdTe. The Jsc increased from around 1 mA cm-2 for undoped and unannealed layers to a range of 25-30 mA cm-2 for CdCl2 annealed layers. In situ arsenic doping resulted in Jsc values up to 18 mA cm-2. The annealing characteristics were very different for these films, compared with the CdCl2 annealed films, with annealing at 500°C dramatically reducing the Jsc. Only annealing under nitrogen at 400°C produced an improvement in Jsc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 24 Nov 2015 10:31
Last Modified: 12 Oct 2019 19:06
URI: http://nrl.northumbria.ac.uk/id/eprint/24719

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