Formation of Cu(In1-xAlx)Se2 by selenising RF magnetron sputtered Cu/Al/In precursor layers

Aninat, Rémi, Zoppi, Guillaume, Forbes, Ian and Miles, Robert (2010) Formation of Cu(In1-xAlx)Se2 by selenising RF magnetron sputtered Cu/Al/In precursor layers. In: 6th Photovoltaic Science Applications and Technology (PVSAT-6), 1-3 April 2010, University of Southampton, United Kingdom.

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Aninat R Zoppi G Forbes I and Miles RW Proceedings of the 6th Photovoltaic Science Applications and Technology.pdf

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The fabrication of Cu(In1-xAlx)Se2 using a multi-step process is reported. This process consists of depositing layers of Cu/Al/In, using magnetron sputtering, to form a metallic precursor layer, capping the stack with a layer of selenium, and then annealing in selenium vapour to synthesise the compound. The effects of annealing conditions on the chemical and physical properties of the converted layers were investigated. Rapid thermal processing at different temperatures indicated the formation of Cu(In1-xAlx)Se2 but only for annealing temperatures<360?C; a CuInSe2 phase was found to be present in all the layers fabricated. Annealing processes at higher temperatures (530-550?C) in a large tube furnace did succeed in producing Cu(In1-xAlx)Se2 without CIS, but only when a copper capping layer was included on the precursor stack.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: solar cells, magnetrons
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: EPrint Services
Date Deposited: 16 Apr 2010 13:39
Last Modified: 17 Dec 2023 12:02

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