Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

Fu, Yong Qing, Luo, Jikui, Milne, S. B., Flewitt, Andrew and Milne, William (2016) Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator. In: IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS), 24-28 January 2016, Shanghai.

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Abstract

A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	09 Jun 2016 12:11
Last Modified:	12 Oct 2019 12:13
URI:	http://nrl.northumbria.ac.uk/id/eprint/27077

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