UMASS AMHERST (2015) Mechanically gated electrical switches by creasing of patterned metal/elastomer bilayer films. US20150294805.
|
Text
US20150294805A1-2.pdf - Published Version Download (219kB) | Preview |
Abstract
Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, a flexible multilayer structure capable of undergoing large compressive deformation was prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to formation of an electrical connection in a reversible and reproducible fashion. A strain-gated electrical switch includes at least two conductive electrodes disposed on a surface of an elastomer substrate, the at least two conductive electrodes forming a gap between the at least two electrodes in an off-state of the strain-gated electrical switch, the gap diminishing under compressive strain to form a crease, the compressive strain pressing the at least two electrodes into contact with each other in an on-state of the strain-gated electrical switch.
Item Type: | Patent |
---|---|
Subjects: | F200 Materials Science F300 Physics H300 Mechanical Engineering J500 Materials Technology not otherwise specified |
Department: | Faculties > Engineering and Environment > Mechanical and Construction Engineering |
Depositing User: | Bin Xu |
Date Deposited: | 11 Aug 2016 12:23 |
Last Modified: | 11 Aug 2016 12:23 |
URI: | http://nrl.northumbria.ac.uk/id/eprint/27558 |
Downloads
Downloads per month over past year