Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis

Ramakrishna Reddy, Kotte, Gopalaswarmy, H., Reddy, P. J. and Miles, Robert (2000) Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis. Journal of Crystal Growth, 210 (4). pp. 516-520. ISSN 0022-0248

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Official URL: http://dx.doi.org/10.1016/S0022-0248(99)00868-4


Gallium-doped zinc oxide thin films were deposited by the spray pyrolysis technique onto Corning 7059 glass substrates at a temperature of 350°C using a precursor solution of zinc acetate in isopropyl alcohol. The films were prepared using different gallium concentrations keeping the other deposition parameters such as air and solution flow rates and solution concentration constant. The variations of the structural, electrical and optical properties with the doping concentration were investigated. X-ray diffraction data showed that the films were polycrystalline with the (0 0 2) preferred orientation. The texture coefficient and grain size were evaluated for different doping concentrations. The films with 5.0 at% gallium had a resistivity of 1.5×10?3 ? cm and a transmittance of 85% with an energy band gap of 3.35 eV.

Item Type: Article
Uncontrolled Keywords: Zinc oxide, Gallium doping, physical properties
Subjects: C100 Biology
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: EPrint Services
Date Deposited: 08 Sep 2009 14:24
Last Modified: 12 Oct 2019 19:05
URI: http://nrl.northumbria.ac.uk/id/eprint/2761

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