Photovoltaic properties of SnS based solar cells

Ramakrishna Reddy, Kotte, Miles, Robert and Koteswara Reddy, N. (2006) Photovoltaic properties of SnS based solar cells. Solar Energy Materials and Solar Cells, 90 (18-19). pp. 3041-3046. ISSN 0927-0248

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Abstract

Polycrystalline thin films of tin sulphide have been synthesised using spray pyrolysis. The layers grown at a temperature of 350 °C had the orthorhombic crystal structure with a strong (1 1 1) preferred orientation. The films had resistivities 30 ? cm with an optical energy band gap (Eg) of 1.32 eV. Heterojunction solar cells were fabricated using sprayed SnS as the absorber layer and indium doped cadmium sulphide as the window layer and the devices were characterised to evaluate the junction properties as well as the solar cell performance. The current transport across the junction has been modelled as a combination of tunnelling and recombination. The best devices had solar conversion efficiencies of 1.3% with a quantum efficiency of 70%

Item Type:	Article
Additional Information:	Dr. Reddy (from Sri Venkaswara University, India) was funded by the Royal Society /and the Indian National Science Academy (INSA ). Invitation to India Day at the Royal Society by President of Royal Society as recognition of importance of Indo-UK collaboration. (Speakers included the chief scientific adviser to the government). Part of the joint work was to develop thin film solar cells based on the use of SnS as a novel alternative to CdTe and CIGS. This paper was also presented at the PVSEC conference in Bangkok in 2003 (the leading PV conference on photovoltaics in Asia).
Uncontrolled Keywords:	Photovoltaic power generation, Solar cells
Subjects:	H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	EPrint Services
Date Deposited:	21 Nov 2008 16:26
Last Modified:	12 Oct 2019 19:06
URI:	http://nrl.northumbria.ac.uk/id/eprint/2810

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