Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

Birkett, Martin, Brooker, Jason, Penlington, Roger, Wilson, Alasdair and Tan, Kian (2008) Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering. IET Science, Measurement and Technology, 2 (5). pp. 304-309. ISSN 1751-8822

Full text not available from this repository. (Request a copy)

Abstract

Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity () and an improvement in long term stability (/) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero' TCR (ppm/°C) and long term stability of better than 0.2% can be realised.

Item Type:	Article
Subjects:	H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	EPrint Services
Date Deposited:	22 Jul 2009 13:30
Last Modified:	12 Oct 2019 19:06
URI:	http://nrl.northumbria.ac.uk/id/eprint/3013

Downloads