A new approach to thin-film SnS PV using MOCVD

Clayton, Andrew J., Irvine, Stuart J. C., Charbonneau, Cecile M. E., Siderfin, Peter and Barrioz, Vincent (2015) A new approach to thin-film SnS PV using MOCVD. Materials Research Innovations, 19 (7). pp. 477-481. ISSN 1432-8917

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Abstract

SnS thin films were deposited by an inline metal organic chemical vapour deposition process using tetramethyltin and diethyldisulfide as precursors. A N2/H2 carrier was used with pre-mixing of the precursors before overhead injection into the deposition chamber. NSG AB soda lime glass was used as the substrate with area of 50 × 50 mm2. The resulting SnS films had calculated band gaps between 1.3 and 1.5 eV. Scanning electron microscopy showed relatively large grains ranging from 0.5 to 1 μm across for a SnS film sample deposited at 556–558 °C. X-ray diffraction confirmed the films to be SnS, but with small concentrations of impure phases such as Sn2S3. Post-growth annealing treatment in a N2atmosphere at 435 °C using SnCl2/MeOH solution at different molar concentrations only showed changes to the film at 0.05 M. The 0.05 M SnCl2/MeOH treatment was aggressive with blistering and etching occurring.

Item Type:	Article
Uncontrolled Keywords:	MOCVD, Thin-film SnS, Photovoltaics
Subjects:	H600 Electronic and Electrical Engineering J500 Materials Technology not otherwise specified
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Paul Burns
Date Deposited:	09 Jul 2018 16:40
Last Modified:	10 Oct 2019 16:46
URI:	http://nrl.northumbria.ac.uk/id/eprint/34889

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