Whalley, Lucy, Crespo-Otero, Rachel and Walsh, Aron (2017) H-Center and V-Center Defects in Hybrid Halide Perovskites. ACS Energy Letters, 2 (12). pp. 2713-2714. ISSN 2380-8195
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Official URL: https://doi.org/10.1021/acsenergylett.7b00995
Abstract
The self-trapping of holes with the formation of a molecular X2– anion is a well-established process in metal halide (MX) crystals, but V-center (2X– + h+ → X2–) and H-center (X– + Xi– + h+ → X2–) defects have not yet been confirmed in halide perovskite semiconductors. The I2– split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.
| Item Type: | Article |
|---|---|
| Subjects: | F100 Chemistry F200 Materials Science F300 Physics H800 Chemical, Process and Energy Engineering |
| Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
| Depositing User: | Elena Carlaw |
| Date Deposited: | 23 Jun 2020 11:51 |
| Last Modified: | 31 Jul 2021 11:32 |
| URI: | http://nrl.northumbria.ac.uk/id/eprint/43555 |
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