Field effect transistor sensors based on in-plane 1T´/2H/1T´ MoTe2 heterophases with superior sensitivity and output signals

Zhang, Shichao, Wu, You, Gao, Feng, Shang, Huiming, Zhang, Jia, Li, Zhonghua, Fu, Yong Qing and Hu, PingAn (2022) Field effect transistor sensors based on in-plane 1T´/2H/1T´ MoTe2 heterophases with superior sensitivity and output signals. Advanced Functional Materials, 32 (41). p. 2205299. ISSN 1616-301X

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2D materials, with their extraordinary physical and chemical properties, have gained extensive interest for physical, chemical and biological sensing applications. However, 2D material-based devices, such as field effect transistors (FETs) often show high contact resistance and low output signals, which severely affect their sensing performance. In this study, a new strategy is developed to combine metallic and semiconducting polymorphs of transition-metal dichalcogenides (TMDCs) to solve this critical issue. Such a phase engineering methodology to integrate large-scale and spatially assembled multilayers of 2H MoTe2 FETs with coplanar metallic 1T′ MoTe2 contacts is applied. Such in-plane heterophase-based FETs exhibit an ohmic contact behavior with an extremely low contact resistance due to the coplanar and seamless connections between 2H and 1T′ phases of MoTe2. These 1T′/2H/1T′ based FETs are successfully demonstrated for detecting NH3 with high current outputs increased up to microamp levels without using any conventional interdigital electrodes, which is compatible with the current CMOS circuits for practical applications. Furthermore, the as-fabricated sensors can detect NH3 gas concentrations down to 5 ppm at room temperature. This study demonstrates a new strategy of applying the heterophase MoTe2-based nanoelectronics for high-performance sensing applications.

Item Type: Article
Additional Information: Funding information: This research is funded by Foundation for Innovative Research Groups of the National Natural Science Foundation of China (NSFC No. 51521003), Self-Planned Task of State Key Laboratory of Robotics and System (HIT) (no. SKLRS201801B), National Basic Research Program of China (2019YFB1310200), and the International Exchange Grant (IEC/NSFC/201078) through the Royal Society, UK and the NSFC.
Uncontrolled Keywords: MoTe2, phase-selective growth, heterophase, ohmic contact, gas sensor
Subjects: H100 General Engineering
H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Rachel Branson
Date Deposited: 03 Aug 2022 13:02
Last Modified: 26 Oct 2022 15:00

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