Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC

Oklobia, Ochai, Jones, Steve, Kartopu, Giray, Lu, Dingyuan, Miller, Wes, Mallick, Rajni, Li, Xiaoping, Xiong, Gang, Kornienko, Vladislav, Abbas, Ali, Bliss, Martin, Walls, John Michael and Irvine, Stuart J. C. (2022) Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and VOC. IEEE Journal of Photovoltaics, 12 (6). pp. 1296-1302. ISSN 2156-3381

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Abstract

In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.

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