Annealing effect on the physical properties of evaporated In2S3 films

Revathi, Naidu, Prathap, Pathi, Miles, Robert and Ramakrishna Reddy, Kotte (2010) Annealing effect on the physical properties of evaporated In2S3 films. Solar Energy Materials & Solar Cells, 94 (9). pp. 1487-1491. ISSN 0927-0248

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In2S3 films of different thicknesses were deposited onto Corning 7059 glass substrates using close spaced evaporation method, at a constant substrate temperature and growth rate of 300 °C and 30 Å/s, respectively. The deposited layers were then annealed in vacuum at temperatures (Ta) in the range 100–500 °C for 1 h and changes in the chemical and physical properties of the layers were investigated. The films annealed at Ta<300 °C resulted in films that consisted of both cubic and tetragonal phases, while for films annealed at Ta ≥300 °C only the tetragonal β-In2S3 phase was found to be present. A considerable change in morphology was observed for the film thickness of >300 nm and annealing temperature of 300 °C. A highest optical transmittance was found to be 92% in the annealing temperature range, 300 °C<Ta<400 °C with a nominal reduction in the energy band gap. The electrical resistivity of the layers was found to decrease with increase of annealing temperature up to 400 °C. The observed changes in the physical properties in relation to the annealing temperature for the films of different thicknesses were reported and discussed.

Item Type: Article
Uncontrolled Keywords: In2S3 films, annealing effect, chemical and physical properties
Subjects: F200 Materials Science
F300 Physics
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Ay Okpokam
Date Deposited: 30 Jan 2012 12:42
Last Modified: 12 Oct 2019 19:07

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