Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

Ramakrishna Reddy, Kotte, Reddy, Vasudeva Reddy Minnam, Leach, Mark, Tan, Kian, Jang, Dongyoung and Miles, Robert (2011) Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S. AIP conference proceedings, 1447. pp. 709-710. ISSN 0094-243X

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Abstract

Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

Item Type:	Article
Additional Information:	Solid State Physics: Proceedings of the 56th DAE Solid State Physics Symposium 2011, 19-23 December 2011, SRM University, Kattankulathur, Tamilnadu, India.
Uncontrolled Keywords:	annealing, crystal structure, crystallites, dislocation density, IV-VI semiconductors, semiconductor growth, semiconductor thin films, solar cells, sputter deposition, thin film devices, tin compounds
Subjects:	F300 Physics H900 Others in Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Related URLs:	Organisation
Depositing User:	Sarah Howells
Date Deposited:	24 Sep 2012 16:39
Last Modified:	12 Oct 2019 19:07
URI:	http://nrl.northumbria.ac.uk/id/eprint/9184

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