Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Wu, Haimeng, Wang, Xiang, Ortiz-Gonzalez, Jose, Alatise, Olayiwola and Pickert, Volker (2020) Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver. In: PEMD 2020 - The 10th International Conference on Power Electronics, Machines and Drives, 15-17 Dec 2020, Nottingham. (In Press)

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Abstract

This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than the voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: SIC MOSFET, SWITCHING TRANSIENT, VOLTAGE-SOURCE, CURRENT-SOURCE, GATE DRIVER
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: John Coen
Date Deposited: 03 Mar 2021 14:16
Last Modified: 03 Mar 2021 14:30
URI: http://nrl.northumbria.ac.uk/id/eprint/45605

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