Xu, Ben, Chen, Dayong and Hayward, Ryan (2014) Mechanically gated electrical switches by creasing of patterned metal/elastomer bilayer films. Advanced Materials. ISSN 1521-4095
Full text not available from this repository. (Request a copy)
Official URL: http://dx.doi.org/10.1002/adma.201400992
Abstract
Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, flexible multilayer structures capable of undergoing large compressive deformation are prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to the formation of an electrical connection in a reversible and reproducible fashion.
| Item Type: | Article |
|---|---|
| Additional Information: | Published online before print 28 April 2014. |
| Subjects: | F100 Chemistry F200 Materials Science F300 Physics H300 Mechanical Engineering |
| Department: | Faculties > Engineering and Environment > Mechanical and Construction Engineering |
| Depositing User: | Bin Xu |
| Date Deposited: | 28 Apr 2014 15:10 |
| Last Modified: | 13 Oct 2019 00:37 |
| URI: | http://nrl.northumbria.ac.uk/id/eprint/16180 |
Actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
