Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Li, Dongfan, Zhu, Yuanwei, Wei, Peng, Lu, Wanlong, Li, Shengtao, Wang, Steven, Xu, Bin and Lu, Guanghao (2020) Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors. IEEE Electron Device Letters, 41 (11). pp. 1665-1668. ISSN 0741-3106

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Abstract

Chemical doping is widely used in the electronic devices. In p-type semiconductor thin films, oxygen doping fills the hole traps and increases hole concentrations, improving the performance of the organic field-effect transistors (OFETs). Due to the low ionization potential for p-type semiconductors, the superfluous holes induced by the oxygen doping degrades the OFETs off-state leakage performance. On the other hand, for p-type semiconductors with high ionization potential (up to 5.5-6.0 eV), the limited oxidation of oxygen is hard to achieve satisfactory doping concentrations to fill the trap states. This refers to the well-known intrinsic incompatibility between the oxygen doping and high-performance OFETs. Herein, a novel strategy is introduced to overcome the incompatibility and achieve high-performance OFETs by using the structural polymer electret. That is, moderate hole concentrations induced by low-pressure (30 Pa) oxygen plasma fill the hole traps within semiconductor. And the built-in field resulted from polymer electret accumulates the holes inside semiconductor near the semiconductor/electret interface, thus improving the OFETs performance. Using a model organic semiconductor with high ionization potential-2,7-didodecyl[1]benzothieno [3,2-b][1]benzothiophene (C12-BTBT) as an example, the high-performance OFETs with field-effect mobility (μFET) of 3.5 cm 2 V -1 s -1 , subthreshold-swing (SS) of 110 mV decade -1 , on-off ratio of 10 4 , and widely-tunable threshold voltage (V t ) are realized at a low voltage below 2 V in the open air.

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