Phenomenon of Short-Time Threshold Voltage Shift and Its Application in Junction Temperature Estimation

Wang, Xiang, Wu, Haimeng and Pickert, Volker (2021) Phenomenon of Short-Time Threshold Voltage Shift and Its Application in Junction Temperature Estimation. In: 2021 IEEE 1st International Power Electronics and Application Symposium (PEAS). IEEE, Piscataway, US, p. 9628403. ISBN 9781665413619, 9781665413596, 9781665413602

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Silicon carbide (SiC) has seen tremendous advancement in high-efficiency, high-frequency, and high-temperature applications during recent years. However, the gate oxide of SiC MOSFET is reported to be less reliable compared with its Si counterpart, introducing the problem of threshold voltage (Vth) shift. Recent publications have investigated Vth shift which are mainly based on the long-time scale ranging from seconds to several days. However, the Vth shift in a shorter time scale has not been widely discussed and studied due to its high bandwidth requirement in measurement. This paper proposed an investigation into the short-time Vth shift using a developed current-controlled gate driver. The phenomenon of short-time Vth shift is captured and analyzed, which shows that it occurs within the first microsecond of the gate voltage being applied. Moreover, a modelling approach using the logarithm equation is proposed to describe the relationship between the short-time Vth shift and the gate stress time. Experiments are conducted under different temperatures, illustrating the temperature dependency of the short-time Vth shift process.

Item Type: Book Section
Additional Information: The author thanks the financial support from Engineering and Physical Sciences Research Council (EPSRC) project (EP/R004366/1), Newcastle University and China Scholarship Council (CSC).; 1st IEEE International Power Electronics and Application Symposium, IEEE PEAS'2021; Shanghai, China: 12- 15 Nov 2021
Uncontrolled Keywords: SiC MOSFET, threshold voltage, Vth shift, TSEP
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
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Depositing User: John Coen
Date Deposited: 17 Sep 2021 14:13
Last Modified: 09 Feb 2022 12:24

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