Zeng, Junling, Xie, Wenhao, Zhou, Heng, Zhao, Tong, Xu, Bin, Jiang, Qinglong, Algadi, Hassan, Zhou, Zhenyu and Gu, Hongbo (2023) Nitrogen-doped graphite-like carbon derived from phthalonitrile resin with controllable negative magnetoresistance and negative permittivity. Advanced Composites and Hybrid Materials, 6 (2). p. 64. ISSN 2522-0128
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Carbon_FResin_24_submission.doc - Accepted Version Download (16MB) |
Abstract
Herein, a nitrogen-doped graphite-like carbon material derived from hybrid phthalonitrile (PN) resin with controllable carbon microstructures including crystalline structures, hybridized carbon configurations, degree of disorder and nitrogen species such as pyridinic N, pyrrolic N, and graphitic N has been manufactured by high temperature annealing method. By simply altering these carbon microstructures through annealing temperature, the lowest resistivity of 1.76 ·cm at 290 K, the negative MR value of -6.10 at a magnetic field of 9 T and negative permittivity over -105 at low frequency are achieved in the semiconducting nitrogen-doped graphite-like carbon material. The results confirm the decreasing degree of disorder attained from Raman spectroscopy, the increasing ratio of sp2 and sp3 hybridized carbon, i.e. C(sp2)/C(sp3), from X-ray photoelectron spectroscopy (XPS), and the rise of charge carrier mobility with increasing the magnetic field from Hall-effect measurement are responsible for the negative MR effect in this nitrogen-doped graphite-like carbon material. The negative permittivity is attributed to the plasma oscillation with delocalized charge carriers by Drude model and the greatly increasing graphitic N in the carbon microstructures. This work opens a new insight for the applications of carbonized PN resins in the electronic device field.
Item Type: | Article |
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Additional Information: | Funding information: The authors are grateful for the support and funding from National Natural Science Foundation of China (Project No. 51873215) and Fundamental Research Funds for the Central Universities. This work is supported by Shanghai Science and Technology Commission (19DZ2271500). The authors also thank Beijing Zhongkebaice Technology Service Co., Ltd for TEM measurements. |
Uncontrolled Keywords: | Negative permittivity, Negative magnetoresistance, Semiconductor, Graphite-like carbon material, Nitrogen doping, Phthalonitrile resin |
Subjects: | F200 Materials Science H300 Mechanical Engineering |
Department: | Faculties > Engineering and Environment > Mechanical and Construction Engineering |
Depositing User: | Rachel Branson |
Date Deposited: | 01 Mar 2023 09:34 |
Last Modified: | 16 Mar 2024 03:30 |
URI: | https://nrl.northumbria.ac.uk/id/eprint/51522 |
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